Radio-frequency measurements of UNiX compounds (X=Al, Ga, Ge) in high magnetic fields |
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| Authors: | AM Alsmadi S Alyones CH Mielke RD McDonald V Zapf MM Altarawneh A Lacerda S Chang S Adak K Kothapalli H Nakotte |
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| Institution: | aPhysics Department, The Hashemite University, 13115 Zarqa, Jordan;bNational High Magnetic Field Laboratory, Pulsed Field Facility, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;cNIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA;dPhysics Department, New Mexico State University, Las Cruces, NM 88003, USA |
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| Abstract: | We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to ~60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency Δf of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in Δf. The results of our skin-depth measurements were compared with previously published B–T phase diagrams for these three compounds. |
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| Keywords: | Uranium compounds Complex conductivity Metamagnetic transition |
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