Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers |
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| Authors: | Lavrent’ eva,L. G.,Vilisova,M. D.,Preobrazhenskii,V. V.,Chaldyshev,V. V. |
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| Affiliation: | 1.Faculty of Physics,Tomsk State University,Tomsk,Russia;2.Siberian Physicotechnical Institute,Tomsk State University,Tomsk,Russia;3.Institute of Physics of Semiconductors, Siberian Division,Russian Academy of Sciences,Novosibirsk,Russia;4.Ioffe Physicotechnical Institute,St. Petersburg,Russia |
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| Abstract: | A nontraditional approach to the control of GaAs properties via the introduction of an excessive amount of arsenic during growth of epitaxial layers under conditions of low-temperature molecular-beam epitaxy (LT-GaAs layers) is considered. The influence of excessive arsenic on the structure and properties of as-grown and annealed LT-GaAs layers is considered as well as the effect of layer doping on the “capture” of excess arsenic. |
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