Effect of a magnetic field on thermally stimulated ionization of impurity centers in semiconductors by submillimeter radiation |
| |
Authors: | A S Moskalenko V I Perel’ I N Yassievich |
| |
Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Department of Theoretical Physics, Lund University, Lund, S-223 62, Sweden |
| |
Abstract: | The probability of electron tunneling from a bound state into a free state in crossed ac electric and dc magnetic fields is calculated in the quasiclassical approximation. It is shown that a magnetic field decreases the electron tunneling probability. This decreases the probability of thermally activated ionization of deep impurity centers by submillimeter radiation. The logarithm of the ionization probability is a linear function of the squared amplitude of the electric field and increases rapidly with the frequency of the electric field. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|