Sputtering deposition and characterization of Ru-doped WO3 thin films for electrochromic applications |
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| Authors: | E Cazzanelli M Castriota R Kalendarev A Kuzmin J Purans |
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| Institution: | (1) Department of Physics, University of Calabria and Unità INFM Cosenza, Arcavacata di Rende, I-87036 Cosenza, ITALY;(2) Institute of Solid State Physics, University of Latvia, Kengaraga street 8, LV-1063 Riga, LATVIA |
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| Abstract: | Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were
studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure
around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten
ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results
suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.
Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15–21, 2002. |
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