Abstract: | In the Shubnikov–de Haas oscillation spectrum of doped InAs/AlSb structures, high-amplitude peaks are established at combination frequencies. It is demonstrated that they are caused by a significant contribution of intersubband scattering to the processes of electron-electron interaction. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 32–38, December, 2008. |