AlGaN/GaN HEMT based hydrogen sensor with platinum nanonetwork gate electrode

AlGaN/GaN high electron mobility transistor (HEMT) based hydrogen sensors incorporating platinum nanonetworks in the gate region were demonstrated. Pt nanonetworks with 2–3 nm diameter were synthesized by a simple and low-cost solution phase method, and applied to the gate electrode of transistor sensor. The HEMT with physically and electrically connected Pt nanonetwork gate showed good pinch-off and modulation of drain current characteristics. Compared to conventional Pt thin film AlGaN/GaN HEMT sensor, the Pt nanonetwork sensor has dramatically improved current response to hydrogen. Relative current change of Pt nanonetwork gated sensor in 500 ppm H₂ balanced with Air ambient was 3.3 × 10⁶% at V_GS of ?3.3 V, while 2.5 × 10²% at V_GS of ?2.9 V for Pt film. This results from large increase in channel conductance induced by huge catalytic surface area of nanostructured Pt networks.