Curing temperature- and concentration-dependent dielectric properties of cross-linked poly-4-vinylphenol (PVP) |
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Authors: | Myung-Hoon Lim Woo-Shik Jung Jin-Hong Park |
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Affiliation: | 1. Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States |
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Abstract: | In this paper, dielectric properties of various thick PVP films cured at temperatures between 125° C and 200 °C are investigated. The thicknesses of PVP films are adjusted by varying their concentration in PGMEA solvent from 10 wt% to 2.5 wt%. Through FT-IR, C–V, SEM, and AFM analyses, the optimum curing process temperatures (150 °C for 10 wt% and 7.5 wt% samples, and 175 °C for 5 wt% samples) where PET substrates can be thermally endured are proposed in terms of their low hysteresis voltage in the C–V curve (1–2 V in 10 wt% samples, below 1 V in 7.5 wt% samples, and 0.5 V in 5 wt% samples). |
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Keywords: | PVP Cross-link PMF PGMEA |
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