Sputter-deposited ZnO thin films consisting of nano-networks for binder-free dye-sensitized solar cells

ZnO nano-network structures with high porosity were prepared for use in the photoelectrodes of binder-free dye-sensitized solar cells (DSSCs) by DC sputtering and subsequent thermal oxidation. Zn thin films prepared at 100 °C showed nano-network structures with high porosity, while those prepared at 25 °C did not. This was partially attributed to the high mobility of sputter-deposited particles that arrived at the surface of the substrate and partially to a supersaturation mechanism. The prepared nano-network Zn was successfully transformed to ZnO without a morphological change via subsequent annealing in air. The power conversion efficiency of DSSCs based on the ZnO nano-network structures exhibited 10 times higher efficiency than those based on ZnO film prepared at 25 °C because of its large surface area for adsorption of dye molecules. The thickness of the ZnO nano-network structures increased linearly at 10 μm h^?1 as a function of sputter time. As the film thickness increased, the power conversion efficiency of DSSCs increased from 1.09% to 1.82%.