| Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells |
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| 作者姓名： | 孙征 王宝瑞 徐仲英 孙宝权 姬扬 倪海桥 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10334040, the Special Fund for Major State Basic Research Project of China under Grant No G001CB3095. |
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| 摘 要： | The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.
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| 关 键 词： | 非辐射重组 载流子动力学 量子阱 重组动力学 光致发光 |
| 收稿时间： | 2006-06-05 |
| 修稿时间： | 2006-06-05 |
Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells |
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| SUN Zheng, WANG Bao-Rui, XU Zhong-Ying, SUN Bao-Quan, JI Yang, NI nai-Qiao, NIU Zhi-Chuan.Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells[J].Chinese Physics Letters,2006,23(9):2566-2569. |
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| Authors: | SUN Zheng WANG Bao-Rui XU Zhong-Ying SUN Bao-Quan JI Yang NI nai-Qiao NIU Zhi-Chuan |
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| Institution: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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