Trap-centers of self-interstitials in silicon |
| |
Authors: | H Lefèvre |
| |
Institution: | 1. Institut für Angewandte Physik, Universit?t Erlangen-Nürnberg, D-8520, Erlangen, Fed. Rep. Germany
|
| |
Abstract: | Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were
obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE
c
−0.49 eV (σ
n
=6.6×10−16cm2) andE
c
−0.07 eV (σ
n
=4.6×10−16cm2) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile
was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the
same concentration. The profiles indicate outdiffusion. A level atE
c
−0.14 eV (σ
n
=1.1×10−16cm2) was not related to A-swirl defects. A level atE
c
−0.11 eV (σ
n
=1.1×10−15cm2) was only detected in one ingot.
The properties of the deep level atE
c
−0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation,
annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon
rather than to an impurity. |
| |
Keywords: | 71 55 |
本文献已被 SpringerLink 等数据库收录! |
|