Electric and tensoelectric study of radiation defects in GaAs

The electric and tensoelectric properties are studied for GaAs crystals which have been irradiated by electrons (2.3 Mev) at 300°K with integrated fluxes of up to 2·10¹⁵ –1·10¹⁹ cm^–2. On the basis of the electrical neutrality equation, including seven energy levels (E1–E5, H0, H1) of the radiation defects, the specific resistivity and the strain sensitivity coefficient are quantitatively analyzed as a function of exposure. The pressure coefficients for the E1–E5 levels with respect to the _c⁶ point are determined to be (0, 9.6, 11.0, 11.6, 11.6)·10^–6 eV/bar, respectively, at 300°K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1986.