Deposition of high-ohmic oriented ZnO films on glass,Si, and PEDOT-PSS,PEDOT-PSS(PVA) substrates at low temperatures by DC-magnetron sputtering |
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Authors: | E R Arakelova A M Khachatryan K E Avjyan N S Aramyan V A Gevorkyan S G Grigoryan G N Mirzoyan |
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Institution: | (1) Centre for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221-005, India;(2) School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi, 221-005, India; |
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Abstract: | Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained
high-ohmic ZnO films (1.1×109, 2×1011, 1.3×106, and 108 Ω cm) on the substrates of glass, Si, and composites based on poly(3, 4-etylendioxythiophene) doped with polystyrensulfonic
acid (PEDOT-PSS), and flexible composites of PEDOT-PSS in polymer matrix of polyvinyl alcohol (PVA). Structural, optical,
and electrophysical characteristics of ZnO films prepared on different substrates were studied. Films obtained in certain
technological regime are on all substrates oriented along crystallographic direction (002) and have transmission coefficient
of the order 80–90% in the range 400–1000 nm. The developed technology for fabrication of high-ohmic grain-oriented ZnO films
at low substrate temperatures can be applied to creation of functional elements in acousto- and bioelectronics. |
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