ClInPc-(TPD-PVK)光电导体性能的研究

本文以氯化酞菁铟(ClInPc)为载流子发生层(CGL),四苯基联苯胺(TPD)与聚乙烯咔唑(PVK)复合为载流子传输层(CTL),形成双层结构的功能分离型有机光电导体(P/R),研究了它的静电感光性能。结果表明,ClInPc/PMMA(30%)与TPD/PVK(1:1)两者匹配时的P/R具有良好的光电导性能,其电荷接受能力V_max≈800V,光电导率△V_t(ls)>70%,暗衰小(<50V/s),残余电位低(30V/s).由真空蒸镀成膜(CGL)所研制的P/R的光电导性能更为优异。

ELECTROPHOTOGRAPHIC CHARACTERISTICS OF THE PHOTORECEPTOR DEViCE CONSISTING OF ClInPc/(PVK-TPD)

The photoelectroconductivity of a double-layered photoreceptor (P/R) was studiedin the paper,in which the chloroinduim phthalocyanine(ClInPc)was a carrier gen-eration layer and polyvinyl carbazole (PVK) incoporating tetraphenyl benzidine (TPD) as,a carrier transportation layer. Results of the P/R consisting of ClInPc/PMMA (30%) matched with TPD/PVK (1:1) shows excellent protoelectronic properties:acceptance po-tential,V_max (800V);residual potential,V_min (30V/s);dark decay,RD (<50V/s);light dis-charge,△V_t (ls) >70%;half decay,t_1/2(ls)=0.30~0.53. Simultaneously the photoelectronicproperties of the P/R device in which the CGL is made by means of evaporating at vacuumare better than that of other method.