Hollow Silicon Carbide Nanostructures

Hollow silicon carbide nanostructures with length up to 1 m have been produced for the first time along with threadlike structures. The preparation of SiC nanostructures from silicon and carbon at 1000-1100 °C was carried out without prior gasification of these elements. The growth of SiC nanostructures involves a step featuring atomization of silicon and carbon at such low temperatures. The growth of SiC nanotubes upon the reduction of carbon by SiO₂ in the initial period of the preparation proceeds with their predominant formation as bundles. Silicon carbide may correspond to the highly textured -modification.