采用电化学技术制备SrMoO4薄膜的生长特性实验研究

采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸锶(SrMoO4)多晶薄膜,着重在实验上研究了薄膜的晶体生长特性.研究表明,采用电化学技术制备SrMoO4晶态薄膜时,薄膜的生长具有如下特点:(1)晶核生成需要一定的时间,但晶核一旦生成,其形貌就比较完整;(2)晶核和晶粒优先选择在基体缺陷(折叠、划痕、缺陷、凹凸不平等)处生长和堆砌;(3)基体上晶粒的数量随着制备时间的增加而增加,晶粒的尺寸随着时间的增加而长大,晶粒逐渐从基体表面上的稀疏分布直到布满整个基体;(4)晶粒的{111}面总是显露的;(5)在薄膜生长的整个过程中,晶粒基本上以其c轴垂直于薄膜基体表面进行的.上述研究结果对进一步认识薄膜的晶体生长和利用电化学法制备晶态薄膜都具有重要意义.

Experimental Researches on the Growth Characteristics of SrMoO4 Thin Film Prepared by Electrochemical Technique

Strontium molybdate(SrMoO_4) thin films with scheelite-structure were prepared directly on the metal molybdenum substrates by constant current electrochemical technique with emphasizing on the study of the growth characteristics of the films.The SEM images of the films deposited for the different time were carried out.It is found that the growth of SrMoO_4 crystalline thin film by electrochemical method possesses special characteristics as follows:(1) The formation of the crystalline nucleuses needs a certain period of time,and the shape of the crystalline nucleuses is integrated at the beginning of the formation of the nucleuses;(2) The places where these crystalline nucleus and granules pile up and grow are those of the defects such as the fold,nick,disfigurement,and cave and convex inequality at the substrate;(3) The quantity and the size of the crystalline granules increase with the preparation time,the crystalline granules are dispersed gradually from sparseness to all over of the substrate;(4) The {111} faces of SrMoO_4 crystals always appear during the growth;and(5) During the whole preparation process,the crystalline granule grows in the direction that its c axis is perpendicular to the surface of the substrate.It is sure that the results are of great significance for the research on the growth of crystals and crystalline films,especially for the research on the growth of crystals and crystalline films by electrochemical method.