The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition |
| |
| Authors: | Sunwoo Lee P A Dowben |
| |
| Institution: | (1) Department of Physics and the Solid State Science and Technology Program, Syracuse University, 13244-1130 Syracuse, NY, USA;(2) Department of Physics and Astronomy, Behlen Laboratory of Physics, University of Nebraska, 68588-0111 Lincoln, NE, USA |
| |
| Abstract: | p-n heterojunction diodes have been fabricated from boron carbide (B1–x
C
x
) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B5H9) and methane (CH4). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300° C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films. |
| |
| Keywords: | 81 15 Gh 82 30 Lp |
| 本文献已被 SpringerLink 等数据库收录！ |
|
