ESR studies of thermally oxidized silicon wafers |
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| Authors: | Christer Brunström Christer Svensson |
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| Affiliation: | National Defence Research Institute, 581 11 Linköping, Sweden;Inst. of Physics and Measurement Techn., Linköping University, 581 83 Linköping, Sweden |
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| Abstract: | We have performed ESR measurements on oxidized (111) silicon wafers and found two ESR centers. One, the previously known Pb center,was found to be a two level interface trap by corona bias studies. The other one, previously known as “damaged silicon” center was found to be a silicon center, probably related to the oxide growth process. |
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