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Effect of NH3 on the growth characterization of TiN films at low temperature |
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| Authors: | H. H. Huang M. H. Hon M. C. Wang |
| Affiliation: | a Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan b Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, 415 Chien-Kung Road, Kaohsiung 80782, Taiwan |
| Abstract: | Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl4–N2–H2 system with various flow rates of NH3 at 600°C. The growth characteristics, morphology and microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Without NH3 addition, no TiN was deposited at 600°C as shown in the X-ray diffraction curve. However, by adding NH3 into the TiCl4–N2–H2 system, the crystalline TiN was obtained. The growth rate of TiN films increased with the increase of the NH3 flow rate. The lattice constant of TiN films decreased with the increase of the NH3 flow rate. At a low NH3 flow rate, the TiN (2 2 0) with the highest texture coefficient was found. At a high NH3 flow rate, the texture coefficient of TiN (2 0 0) increased with the increase of the NH3 flow rate. In morphology observation, thicker plate-like TiN was obtained when the NH3 flow rate was increased. When the flow rate of NH3 was 15 sccm, Moiré fringes were observed in the TiN film as determined by TEM analysis. The intrinsic strain was found in the TiN film as deposited with 60 sccm NH3. |
| Keywords: | A1. Crystal morphology A1. Crystal structure A3. Chemical vapor deposition processes B1. Nitride B1. Titanium compounds |
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