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Tin as an n-type dopant in the molecular beam epitaxial growth of GaAs(111)A |
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| Authors: | S. J. Hu M. R. Fahy B. A. Joyce K. Sato |
| Affiliation: | a School of Physics, Universiti Sains Malaysia Penang 1180028u Malaysia b Interdisciplinary Research Centre for Semiconductor Materials, Blackett Laboratory, Imperial College, Prince Consort Road London SW7 2BZ United Kingdom c Japan Energy Corporation, 10-1 Toranomon-2-Chome, Minato-ku Tokyo 105 Japan |
| Abstract: | We have made a systematic study of the tin doping of GaAs layers grown on GaAs(111)A substrates using molecular beam epitaxy (MBE). A series of samples were grown with a range of substrate temperatures (from 460 to 620°C), As:Ga flux ratios (5:1 to 25:1) and tin concentrations (1016 to 1020 atoms cm−3). Layers grown on (111)A surfaces were n-type (in contrast to silicon doping) but with carrier concentrations dependent on growth conditions. We have used secondary ion mass spectrometry (SIMS) measurements to confirm the concentration of tin incorporated and its distribution within the layers. |
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