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敏感半导体陶瓷的显微物理模型(Ⅱ)
引用本文:南策文.敏感半导体陶瓷的显微物理模型(Ⅱ)[J].物理学报,1987,36(10):1313-1320.
作者姓名:南策文
作者单位:武汉工业大学硅酸盐材料科学与工程系
摘    要:本文用敏感半导体陶瓷的显微物理模型描述了热敏、气敏和湿敏陶瓷的电性能。得到了一些重要的结果。这些理论结果与实验结果相符,它们为敏感陶瓷的设计提供了理论依据。可预料该模型可作为这类半导体陶瓷的统一的显微物理模型。 关键词

收稿时间:1986-10-27

A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ)
NAN CE-WEN.A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ)[J].Acta Physica Sinica,1987,36(10):1313-1320.
Authors:NAN CE-WEN
Abstract:Following paper (I), we describe the electrical feature of thermal-sensitive, gas-sensitive and humiditysensitive ceramics by the microstructure-physical model of sensitive ceramics, and obtain some important results. These theoretical results are consistent with experiments, they provide a basis of the theory for materials design of sensitive ceramics. We expect that this model can be taken as the unified microstructure-physical model of this kinds of semiconductor ceramics.
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