Novel pore shape and self-organization effects in n-GaP(111) |
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Authors: | K Müller J Wloka P Schmuki |
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Institution: | (1) Department of Materials Science, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen, Germany;(2) Present address: Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland |
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Abstract: | n-type GaP(111) has been porosified in HCl, H2SO4, HBr, NaBr, and alkaline NaBr in the dark. The pore morphology strongly depends on the electrochemical conditions and on
the chemical nature of anions in the electrolyte. Independent of the pH-value of bromide-containing solutions, layers of triangular
pores with a defined cross-section were growing under an irregular pore nucleation layer. Optimized conditions led to a regular
structure of equally sized triangular pores with a side length of (98 ± 5) nm. The pore walls are determined by (110)-crystal
planes of GaP. In other electrolytes such as HCl or H2SO4 it was not possible to form triangular pores during the electrochemical etching process. |
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Keywords: | III-V semiconductors Self-organization Porosification Pore morphology Anodization Crystal planes |
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