The structure of tetrahedrally coordinated amorphous semiconductors

The diffracted X-ray intensities, F(k)'s, and radial distribution functions of Ge, some III–V compounds, and Ge_0.5Sn_0.5 are presented. It is shown that the radial distribution functions of the III–V compounds are similar to those of Ge. If the continuous random network, as developed for amorphous Ge, is also applicable to the III–V's, then several bonds between like atoms (wrong bonds) must be present. It is argued that the energy of wrong bonds may not be sufficiently high to prohibit their formation.