The quantum efficiency of the internal photo-electric effect in indium antimonide

A method is described for measuring the relative quantum efficiency of the internal photo-electric effect in semi-conductors by simultaneously measuring the photo-magnetoelectric and photo-conductive effect. The results of measurements on indium antimonide are given. The quantum efficiency begins to increase if the energy of the photon exceeds 0·47 eVat room temperature. The quantum efficiency as a function of the energy of the photon is analysed on the basis of the conception of impact ionization and it is shown that a study of the structure of this curve can supply information on the, band structure of a semi-conductor in the region of high energies of electrons and holes.

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The authors thank M. Závtová and M. Vantuchová for efficient help with the measurements, K. mirous and V. Vrchovská for preparing the material, E. Antoník for critical remarks and M. Matyá and A. Müller for determining the constants of the material.