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Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states
Authors:Andriy Romanyuk   Viktor Melnik   Yaroslav Olikh   Johannes Biskupek   Ute Kaiser   Martin Feneberg   Klaus Thonke  Peter Oelhafen
Affiliation:aDepartment of Physics, University of Basel, 4056 Basel, Switzerland;bInstitute of Semiconductor Physics, 03028 Kyiv, Ukraine;cElectron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;dInstitute of Semiconductor Physics, University of Ulm, 89081 Ulm, Germany
Abstract:Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO2 system is important.
Keywords:Silicon nanoclusters   Photoluminescence   Cluster–  matrix interface   Ultrasound
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