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Gate-voltage-induced realization of different rational fractions ofh/e2at fixed values of current and magnetic field |
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| Institution: | 1. Physikalisch-Technische Bundesanstalt, Bundesallee 100, Braunschweig, D-38116, Germany;2. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, Stuttgart, D-70569, Germany;3. Physikalisch-Technische Bundesanstalt, Bundesallee 100, Braunschweig, D-38116, Germany;1. College of Chemistry and Enviromental Science, Inner Mongolia Key Laboratory of Environmental Chemistry, Inner Mongolia Normal University, 81 zhaowudalu, Hohhot, 010022, China;2. College of Pharmacy, Inner Mongolia Medical University, Jinchuankaifaqu, Hohhot, 010110, China;1. Department of Industrial Engineering (ETEC Division), University of Naples Federico II, P.le Tecchio 80, 80125 Naples, Italy;2. Department of Architectural Engineering, The Pennsylvania State University, University Park, PA, USA |
| Abstract: | We present magnetotransport measurement results obtained on samples with a window-shaped geometry and Schottky gates in the quantum Hall regime. The investigated samples consist of two Hall bars shorted by wide regions of 2DEG. With Schottky gates across each of the Hall bars electron densities and hence filling factors within the two arms of the structures can individually be tuned.We show that by applying appropriate gate voltages to the samples four-terminal resistances equal to different rational fractions ofh/e2can be realized at fixed magnetic field. The measurement results can be explained in the edge channel picture of the quantum Hall effect as well as in a local transport model. In both models it is the interplay between the gate-voltage-induced sub-gate filling factors and the resulting partition of the total current onto the two sample arms that leads to the observed phenomena. |
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