|
|||||
|
|
Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions |
|
| Institution: | 1. School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei, 230009, China;2. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing, 100192, China;1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. College of Electronic Information and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049,China;3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;4. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
| Abstract: | We have studied experimentally the magneto-transport properties of type-II broken-gap Ga1 − xInxAsSb/p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility atT = 4.2–47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov–de Haas oscillations at low temperatures (1.5–20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |