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Room-temperature polariton lasing in semiconductor microcavities
Authors:Christopoulos S  von Högersthal G Baldassarri Höger  Grundy A J D  Lagoudakis P G  Kavokin A V  Baumberg J J  Christmann G  Butté R  Feltin E  Carlin J-F  Grandjean N
Affiliation:School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ, UK.
Abstract:We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 microJ cm-2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.
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