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Effects of interface dislocations on properties of ferroelectric thin films |
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| Authors: | Yue Zheng Biao Wang CH Woo |
| Institution: | a Electro-Optics Technology Center, Harbin Institute of Technology, Harbin 150001, China b Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong, SAR, China c The State Key Lab of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China |
| Abstract: | Effects of interfacial dislocations on properties of thin-film ferroelectric materials, such as the self-polarization distribution, Curie temperature, dielectric constant and the switching behaviors, are investigated via the system dynamics based on the Landau-Devonshire functional. Dislocation generation in the film is found to reduce the overall self-polarization and the Curie temperature. The spatial variations are both very strong, particularly in the immediate neighborhood of the dislocation cores. In agreement with previous results based on a stationary model, a dead layer exists near the film/substrate interface, in which the average self-polarization is much reduced. Moreover, it is evident from our results that interface dislocations play an important role in suppressing the remnant polarization and the coercive field of the polarization. |
| Keywords: | Interface dislocations Self polarization Ferroelectric thin film Remnant polarization Coercive field |
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