Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots |
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Authors: | Zhou Wang-Min Wang Chong-Yu Chen Yong-Hai and Wang Zhan-Guo |
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Institution: | College of Mechanical & Electrical Engineering, Zhejiang University of Technology, Hangzhou 310032, China; Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081, China; Department of Physics, Tsinghua University, Beijing 100084, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | In this paper, we perform systematic calculations of the stress and strain
distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with
different wetting layer (WL) thickness, using the finite element method (FEM).
The stresses and strains are concentrated at the boundaries of the WL and
QDs, are reduced gradually from the boundaries to the interior, and tend to
a uniform state for the positions away from the boundaries. The maximal
strain energy density occurs at the vicinity of the interface between the WL
and the substrate. The stresses, strains and released strain energy are
reduced gradually with increasing WL thickness. The above results show that
a critical WL thickness may exist, and the stress and strain distributions
can make the growth of QDs a growth of strained three-dimensional island
when the WL thickness is above the critical value, and FEM can be applied to
investigate such nanosystems, QDs, and the relevant results are supported by
the experiments. |
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Keywords: | quantum dots strain and stress distribution strain
energy finite element method |
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