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| 非晶/微晶过渡区内材料性能及电池的研究 | |
| 引用本文： | 陈飞,张晓丹,赵颖,魏长春,孙建.非晶/微晶过渡区内材料性能及电池的研究[J].人工晶体学报,2007,36(1):119-122,128. |
| 作者姓名： | 陈飞 张晓丹 赵颖 魏长春 孙建 |
| 作者单位： | 1. 南开大学光电子薄膜器件与技术研究所,天津,300071 2. 南开大学光电子薄膜器件与技术天津市重点实验室,天津,300071 3. 光电信息技术科学教育部重点实验室(南开大学,天津大学),天津,300071 |
| 基金项目： | 国家重点基础研究发展计划(973计划);国家自然科学基金;天津市自然科学基金;中国-希腊作项目;新世纪优秀人才支持计划课题 |
| 摘 要： | 本文采用甚高频等离子增强化学气相沉积(VHF-PECVD)技术,通过调节硅烷浓度,获得了系列硅薄膜材料,并用拉曼散射光谱和X射线衍射光谱对材料的结构特性进行了测试分析,同时还使用原子力显微镜观察比较了薄膜的表面形貌。结果发现:在非晶/微晶过渡区内存在着一个光敏性较大的区域,这个区域内的材料晶化率为零,但是表面存在一些微小的晶粒;与拉曼散射光谱相比,X射线衍射光谱对微小的晶化更加敏感。以这部分材料作为太阳电池的本征层,在SnO2衬底上制备了p-i-n型太阳电池,电池的初始开路电压(Voc)达到了0.891V。 |
| 关 键 词： | 甚高频等离子增强化学气相沉积 过渡区 太阳电池 |
| 文章编号： | 1000-985X（2007）01-0119-04 |
| 修稿时间： | 2006-08-27 |
Study on Transition Materials from Amorphous to Microcrystalline Silicon and Solar Cells |
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| CHEN Fei,ZHANG Xiao-dan,ZHAO Ying,WEI Chang-chun,SUN Jian.Study on Transition Materials from Amorphous to Microcrystalline Silicon and Solar Cells[J].Journal of Synthetic Crystals,2007,36(1):119-122,128. | |
| Authors: | CHEN Fei ZHANG Xiao-dan ZHAO Ying WEI Chang-chun SUN Jian |
| Institution: | Institute of Photo-electronics Thin Fill Devices and Technique of Nankai University, Tianjin 300071, China; Key Laboratory of Photo-electronics Thin Fill Devices and Technique of Tianjin, Nankai University,Tianjin 300071 ,China; Key Laboratory of Opto-electronic Information Science and Technology ( Nankai University, Tianjin University |
| Abstract: | Several series of hydrogenated silicon films were prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD) with various silane concentrations.The structural characteristics and the surface appearances were studied by Raman scatting spectrum,X-ray diffraction spectrum and atomic force microscope.The results indicate that there is a special district in the transition zone,in which the materials have a high photosensitivity and a low crystalline volume fraction(Xc) with several tiny crystals.X-ray diffraction spectrum is more sensitive than Raman scatting spectrum to small crystallization.Using these silicon films as the intrinsic layer,p-i-n solar cells were prepared on SnO2 substrates.The open circuit voltage(Voc) was 0.891V. |
| Keywords: | very high frequency plasma enhanced chemical vapor deposition transition zone solar cells |
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