| Ge-Sb-Se硫系薄膜制备及光学特性研究 |
| |
| 引用本文： | 张巍,陈昱,付晶,陈飞飞,沈祥,戴世勋,林常规,徐铁峰. Ge-Sb-Se硫系薄膜制备及光学特性研究[J]. 物理学报, 2012, 61(5): 56801-056801 |
| |
| 作者姓名： | 张巍 陈昱 付晶 陈飞飞 沈祥 戴世勋 林常规 徐铁峰 |
| |
| 作者单位： | 1. 宁波大学信息科学与工程学院,宁波,315211
2. 宁波大学信息科学与工程学院,宁波315211／中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,西安710119 |
| |
| 基金项目： | 国家自然科学基金(批准号: 60978058, 61008041, 61107047)、宁波市新型光电功能材料及器件创新团队(批准号: 2009B21007)、浙江省自然科学基金(批准号: Y4110322)、中国科学院西安光机所瞬态光学与光子技术国家重点实验室开放基金 (批准号: SKLST201010)、浙江省教育厅科研计划(批准号: Y201017523, Y200907452)、教育部新世纪优秀人才计划项目(批准号: NCET-10-0976)、宁波市自然科学基金(批准号: 2011A610189 |
| |
| 摘 要： | 介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.
|
| 关 键 词： | 硫系玻璃 硫系薄膜 热蒸发法 光学特性 |
| 收稿时间： | 2011-04-16 |
Study on fabrication and optical properties of Ge-Sb-Se thin films |
| |
| Zhang Wei,Chen Yu,Fu Jing,Chen Fei-Fei,Shen Xiang,Dai Shi-Xun,Lin Chang-Gui and Xu Tie-Feng. Study on fabrication and optical properties of Ge-Sb-Se thin films[J]. Acta Physica Sinica, 2012, 61(5): 56801-056801 |
| |
| Authors: | Zhang Wei Chen Yu Fu Jing Chen Fei-Fei Shen Xiang Dai Shi-Xun Lin Chang-Gui Xu Tie-Feng |
| |
| Affiliation: | College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China; State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics of CAS, Xi'an 710119, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;College of Information Science and Engineering, Ningbo University, Ningbo 315211, China |
| |
| Abstract: | Several methods of fabricating chalcogenide thin films are introduced. In this paper, thermal evaporation and radio frequency methods are used to fabricate Ge-Sb-Se thin films. The thicknesses and roughnesses of the films are measured by surface profile-meter. The film growth rates are calculated. The component difference between film and target material is tested by X-ray photoelectron spectroscopy. The third-order optical nonlinearity and the transmission spectra of films fabricated by thermal evaporation are investigated using femto-second Z-scan method and spectrophotometer, to obtain the values of nonlinear refraction, nonlinear absorption and thickness of films. The results show that the films fabricated by thermal evaporation have excellent physical structures and optical properties, and possess promising potential applications in integrated optical devices. |
| |
| Keywords: | chalcogenide glasses chalcogenide thin films thermal evaporation optical properties |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
