Structural, optical and electrical properties of amorphous silicon thin films prepared by sputtering with different targets

Amorphous silicon (a-Si) films were prepared by sputtering method with polycrystalline and monocrystalline silicon targets. Structural, optical and electrical properties of the a-Si films have been systematically studied. The deposition power is from 100 to 200 W. Compared with the a-Si films deposited by using monocrystalline silicon target, the a-Si films prepared with polycrystalline silicon target exhibit better growth property, similar optical band gap, and own the highest mobility of 1.658 cm²/Vs, which make a good match with the optimal window of optical band gap for a-Si solar cells. The results indicated that the polycrystalline silicon target is superior to the monocrystalline silicon target when used to prepare a-Si films as the intrinsic layer in a-Si solar cells.