Nanoscale semiconductor Pb1−xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition |
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Authors: | Shaoxiong LinXin Zhang Xuezhao ShiJinping Wei Daban LuYuzhen Zhang Huanhuan KouChunming Wang |
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Institution: | Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China |
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Abstract: | In this paper the fabrication and characterization of IV-VI semiconductor Pb1−xSnxSe (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn …), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb1−xSnxSe is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch. |
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Keywords: | Pb1&minus xSnxSe Gold substrate EC-ALD UPD Photoelectric switch |
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