首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating
Authors:JR CasanovaEA Heredia  CD BojorgeHR Cánepa  G KellermannAF Craievich
Institution:a CITEDEF-CINSO-CONICET Centro de Investigaciones en Sólidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires, Argentina
b Departamento de Física, Universidade Federal do Paraná, Curitiba, PR, Brazil
c Instituto de Física, Universidade de São Paulo, Cidade Universitária, São Paulo, SP, Brazil
Abstract:Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 °C, and (ii) isothermal annealing at 450 °C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 °C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 °C. These results indicate that thermal annealing at the highest temperature (550 °C) induces a noticeable compaction effect on the structure of the studied thin films.
Keywords:ZnO  Nanostructured thin films  XR  GISAXS
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号