Microstructural evolution upon annealing in Ar-implanted Si |
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Authors: | BS Li CH ZhangYT Yang LQ ZhangCL Xu |
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Institution: | Institute of Modern Physics, Chinese Academy of Sciences, LanZhou 730000, PR China |
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Abstract: | The annealing effects of crystalline silicon (Si) implanted with argon (Ar) ions at a dose of 2 × 1016 Ar+/cm2 at room temperature and subsequently annealed at 400-1100 °C for 30 min were investigated. The samples were analyzed by transmission electron microscopy and Raman spectroscopy. Before and after annealing up to 600 °C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. After annealing at 800 °C, argon bubbles are observed together with extended defects. The damage layer evolves into a polycrystalline structure. After annealing at 1100 °C; exfoliation occurs on the sample surface, and microtwin lamellas form in the damage layer. Raman scattering revealed that a strong recrystallization occurs from 600 °C to 800 °C. The results were compared with the case of helium implantation, with particular focus on bubble formation mechanisms. |
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Keywords: | Ion implantation Annealing Bubbles Defects Transmission electron microscopy |
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