Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates |
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| Authors: | Ziwen Zhao Lizhong Hu Heqiu Zhang Jingchang Sun Jiming Bian Jianze Zhao |
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| Affiliation: | a School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
b The key laboratory for micro/nano technology and system of Liaoning province, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A0X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. |
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| Keywords: | Sb-doped ZnO Pulsed laser deposition Hall-effect-measurement X-ray diffraction Scan electronic microscopy Photoluminescence spectra |
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