Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (0 0 1)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer |
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Authors: | SL Cheng CY ZhanSW Lee H Chen |
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Institution: | a Department of Chemical and Materials Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, Republic of China b Institute of Materials Science and Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, Republic of China |
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Abstract: | In this study, we demonstrated significant enhancement of the formation of low-resistivity NiSi nanocontacts with controlled size on (0 0 1)Si0.7Ge0.3 substrates by combining the nanosphere lithography with the use of a new Ni/a-Si bilayer nanodot structure. Low-resistivity NiSi with an average size of 78 nm was observed to be the only silicide phase formed in samples annealed at 350-800 °C. The presence of the interposing Si layer with appropriate thickness was found to effectively prevent Ge segregation and maintain the interface stability in forming NiSi nanocontacts on (0 0 1)Si0.7Ge0.3. As the annealing temperature was increased to 900 °C, amorphous SiOx nanowires were observed to grow from silicide nanocontact regions. The NSL technique in conjunction with a sacrificial Si interlayer process promises to be applicable in fabricating periodic arrays of other low-resistivity silicide nanocontacts on Si1−xGex substrates without complex lithography. |
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Keywords: | Nanosphere lithography NiSi Nanocontacts Si interlayer SiGe SiOx nanowires |
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