Annealing ambient on the evolution of He-induced voids in silicon |
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Authors: | BS Li CH ZhangYR Zhong DN WangLH Zhou YT Yang LQ ZhangHH Zhang Y ZhangLH Han |
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Institution: | a Institute of Modern Physics, Chinese Academic of Sciences, Lanzhou 730000,PR China b Graduate School of Chinese Academy of Sciences, Beijing 100049, PR China c Institute of High Energy Physics, Chinese Academic of Sciences, Beijing 100039, PR China |
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Abstract: | The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A 〈1 0 0〉-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 × 1016 cm−2 at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 °C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. |
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Keywords: | Silicon Positron annihilation Void Annealing ambient TEM |
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