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Investigation of chemical mechanical polishing of zinc oxide thin films |
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| Authors: | Sushant Gupta Purushottam KumarA. Arul Chakkaravathi Doina CraciunRajiv K. Singh |
| Affiliation: | a Department of Materials Science, University of Florida, Gainesville, FL-32611, United States b Sinmat Incorporated, 2153 SE Hawthorne Road, #129, Gainesville, FL-32641, United States c National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania |
| Abstract: | Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 Å (as compared to the initial roughness of 26 ± 6 Å) were obtained under optimized conditions with removal rates as high as 670 Å/min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail. |
| Keywords: | Transparent conducting oxide Zinc oxide Chemical mechanical polishing Thin films |
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