Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating |
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| Authors: | Yanhui Zhao Guoqiang LinJinquan Xiao Wenchang LangChuang Dong Jun GongChao Sun |
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| Affiliation: | a Institute of Metals Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
b Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China |
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| Abstract: | Thin films of titanium nitride (TiN) were deposited on stainless steel substrates by a modified deposition technique, double-layered shielded arc ion plating with vicarious circular holes (DL-SAIP). The results show that the TiN film with the distance of 10 mm between the double-layered shield plates had the least droplets. The deposition rate of the films prepared with the new technique was more homogeneous than that of all the other shielded arc ion plating. The film/substrate adhesion and microhardness values of the TiN films were higher than 40 N and 18 GPa, respectively. Thus such TiN thin films can be expected in applications. |
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| Keywords: | Shielded arc ion plating TiN Thin films Deposition rate Droplet particles Adhesion |
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