| High Resistive ZnO／Diamond／Si Films Grown via Metal-organic Chemical Vapour Deposition |
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| 作者姓名： | YANGHong-jun ZHAOBai-jun FANGXiu-jun DUGuo-tong LIUDa-li GAOChun-xiao LIUXi-zhe |
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| 作者单位： | [1]StateKeyLaboratoryonIntegratedOptoelectronics,CollegeofElectronicScienceandEngineering [2]StateKeyLabonSuperhardMaterials,JilinUniversity,Changchun130023,P.R.China |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划) |
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| 摘 要： | Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(Ill) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.
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| 关 键 词： | 抵抗力 氧化锌 钻石 硅薄膜 蒸汽沉积作用 声波 霍耳效应 |
| 收稿时间： | 2004-03-04 |
High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition |
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| YANGHong-jun ZHAOBai-jun FANGXiu-jun DUGuo-tong LIUDa-li GAOChun-xiao LIUXi-zhe.High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition[J].Chemical Research in Chinese University,2005,21(2):137-140. |
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| Authors: | YANG Hong-jun ZHAO Bai-jun FANG Xiu-jun DU Guo-tong LIU Da-li GAO Chun-xiao LIU Xi-zhe |
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| Institution: | 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineerings;
2. State Key Lab on Superhard Materials, Jilin University, Changchun 130023, P. R. China |
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| Abstract: | Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods. |
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| Keywords: | MOCVD XRD SEM Hall effect |
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