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Morphology transition of one-dimensional ZnO grown by metal organic vapour phase epitaxy on (0 0 0 1)-ZnO substrate
Authors:C. Thiandoume   J. Barjon   O. Ka   A. Lusson   P. Galtier  V. Sallet
Affiliation:aDépartement de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Senegal;bGroupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St-Quentin, France
Abstract:
Metal organic vapour phase epitaxy (MOVPE) has been used to successfully grow one-dimensional (1D) ZnO deposits on (0 0 0 1)-ZnO substrate. Dimethylzinc–triethylamine and nitrous oxide were used as zinc and oxygen sources, respectively, with nitrogen as the carrier gas. Vertically aligned 1D ZnO structures were observed along the c-axis by using lower VI/II mole ratio RVI/II<2025 and/or high growth temperatures (Tg>800 °C). The diameter, length, density and the mechanism of formation could be controlled with the growth time. Scanning electron microscopy (SEM) shows different structures, i.e., sharp-top, flat-top and open-top with slim bottom and large-top one-dimensional ZnO. A good structural quality was revealed by X-ray diffraction rocking curve with a full-width at half-maximum (FWHM) varying from 40 to 92 arcsec with increasing growth time.
Keywords:A1. Growth models   A1. One-dimensional ZnO   A3. Metal organic vapour phase epitaxy   B2. Semiconducting II–  VI materials
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