Impact-ionized electron-hole plasma instability in GaAs |
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| Authors: | R Mickeviius and A Reklaitis |
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| Institution: | (1) Semiconductor Physics Institute of the Lithuanian Academy of Sciences, Pozhelos 52, Vilnius, Lith. SSR, USSR |
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| Abstract: | The possibility of the excitation of impact-ionized electron-hole plasma oscillatory instability in GaAs with frequency up to 1012 Hz is shown. The linear and nonlinear stages of the instability are investigated. |
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| Keywords: | semiconductors impact ionization plasma instability |
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