Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film |
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Authors: | Lu Zhao-Xin Teng Bao-Hu Yang Xin Rong Yong-Hui Zhang Huai-Wu |
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Affiliation: | School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract: | By modifying the interchange interactions and the transverse fields on the epitaxy surface layer, this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction. The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function. The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer. The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed. |
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Keywords: | ferroelectric thin film phase diagram |
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