| SiO_2上共溅射W-Si薄膜退火后的X射线衍射研究 |
| |
| 引用本文： | 陈存礼,郭玲.SiO_2上共溅射W-Si薄膜退火后的X射线衍射研究[J].物理学报,1989,38(8):1379-1383. |
| |
| 作者姓名： | 陈存礼 郭玲 |
| |
| 作者单位： | 南京大学物理系；南京固体器件研究所 |
| |
| 摘 要： | 用一个W-Si混合靶源, 以直流磁控溅射在SiO_2_ 上共溅射一层W-Si薄膜后, 进行500-1000℃ , 15s 的真空快速热退火, 发现薄层电阻随退火温度出现一反常的极大值. 用转靶X射线衍射研究分析了这一反常现象. 在直至1 1 0 0 ℃ 高温退火的样品中发现薄膜中存在W_5_Si_3_.它对薄层电阻有一定的贡献.
关键词：
|
| 关 键 词： | 二氧化硅 半导体 薄膜 退火 X射线 |
X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED W-Si FILMS ON S10_2_ |
| |
| Xie Shi-mei,Mei Liang-mo,Sun Xin.X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED W-Si FILMS ON S10_2_[J].Acta Physica Sinica,1989,38(8):1379-1383. |
| |
| Authors: | Xie Shi-mei Mei Liang-mo Sun Xin |
| |
| Abstract: | Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5_Si_3_ appeared in the annealed film at temperature up to 1100℃, which contributed partly to the sheet resistance.
Keywords： |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
