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非线性增益和波导结构对半导体激光器的谱线宽度的作用
引用本文:郭长志,黄永箴.非线性增益和波导结构对半导体激光器的谱线宽度的作用[J].物理学报,1989,38(5):699-705.
作者姓名:郭长志  黄永箴
作者单位:北京大学物理系
摘    要:本文采用半经典理论研究了非线性增益和波导结构对量子相位噪声引起的模式谱线增宽过程的作用,得出谱线宽度不但与线性增益而且与三阶增益有关,并且都受到波导结构的制书。从而提出新的谱线增宽因子和与功率无关的线宽的新机制。 关键词

关 键 词:半导体  激光器  谱线  波导宽度
收稿时间:1988-03-28

EFFECT OF NONLINEAR GAIN AND WAVEGUIDE STRUCTURE ON THE LINEWIDTH OF SEMICONDUCTOR LASERS
GUO CHANG-ZHI and HUANG YONG-ZHEN.EFFECT OF NONLINEAR GAIN AND WAVEGUIDE STRUCTURE ON THE LINEWIDTH OF SEMICONDUCTOR LASERS[J].Acta Physica Sinica,1989,38(5):699-705.
Authors:GUO CHANG-ZHI and HUANG YONG-ZHEN
Abstract:The effect of nonlinear gain and waveguide structure on the modal linewidth broadening produced by with quantum phase noise in semiconductor lasers is inverstigated with semiclassical theory. It is shown that the modal linewidth depends not only on the linear gain but also on the third order nonlinear gain and the waveguide structure. Thus a new linewidth broadening enhancement factor and a new mechanism of the power-independent linewidth component are proposed.
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