| 用热激电导谱确定非晶态半导体能隙态密度的研究 |
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| 引用本文： | 朱美芳,许政一.用热激电导谱确定非晶态半导体能隙态密度的研究[J].物理学报,1989,38(12):1988-1995. |
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| 作者姓名： | 朱美芳 许政一 |
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| 作者单位： | (1)中国科学技术大学研究生院; (2)中国科学院物理研究所 |
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| 基金项目： | 国家自然科学基金;中国科学技术大学科研基金 |
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| 摘 要： | 本文用较完整的热激电导理论分析方法,处理非晶态半导体的热激电导谱,获得a-Si:H薄膜和a-Si:H/a-SiNx:H超晶格中能隙上半部缺陷态密度的分布。其结果与用Fritzsche的理论分析方法获得的态密度分布一致。进一步比较了两种处理方法的主要特点,讨论了它们的特征参量,最大热发射能级Em与准费密能级Eq之间的关系。结果证明,a-Si:H热激电导的分析应用弱复合情况处理,热激载流子的再俘获不能忽略。表明Gu等人的理论分析进一步改进了对非晶态半导体热激电导谱的处理。
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| 关 键 词： | 非晶态半导体 热激电导 能隙态密度 |
| 收稿时间： | 1989-02-20 |
AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA |
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| ZHU MEI-FANG and XU ZHENG-YI.AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA[J].Acta Physica Sinica,1989,38(12):1988-1995. |
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| Authors: | ZHU MEI-FANG and XU ZHENG-YI |
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| Abstract: | Determination of the density of states in the uper half of gap in a-Si:H film and a-Si:H/a-SiNx: H superlattices were obtained by a more comprehensive theoretical analysis of the thermostimulated comductivity. The results are consistent with that of Fritzsche's analysis. The main features of the two different analytical approaches and the correlation between maximnm chermostimulated current emission energy Em and quasi-Fermi level were discussed. The results show that the thermostimulated conductivity in a-Si: H should be analysed in weak recombination condition. In consequence, retrapping of the thermostimulated carriers can not be negleted. Theory of Gu et al. improves the analysis of measurement of thermostimulated conductivity. |
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