In-situ electrical measurement in ion implanted amorphous silicon films |
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| Authors: | Y. Ochiai K. Uematsu K. Takita K. Masuda |
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| Affiliation: | Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan |
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| Abstract: | ![]()
Doping in amorphous silicon has been studied by P, B and Si implantation in evaporated silicon films made by electron beam evaporations. After double implantation of P and B, a compensation effect has been observed in implanted amorphous silicon layer. |
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