The role of carbon in the precipitation of oxygen in silicon |
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| Authors: | GS Oehrlein DJ Challou AE Jaworowski JW Corbett |
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| Institution: | Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 1222, USA |
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| Abstract: | Oxygen precipitates were formed in Czochralski-grown silicon samples at different temperatures and for different lenghts of times of heat treatment. Precipitation was evident from infrared(IR) analysis of so treated samples. These samples were irradiated with 2 MeV electrons at near room temperature (310 K). Deep level transient spectroscopy measurements and IR measurements were performed on these samples. The results show directly that a single carbon atom or a carbon-oxygen complex can serve as nucleation centers for the oxygen precipitation. |
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