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Energy barrier between states of a bistable center in photochromic crystals CdF2:Ga and CdF2:In
Authors:S A Kazanskiĭ  A S Shcheulin  A I Ryskin
Institution:(1) St. Petersburg State University of Information Technologies, Mechanics, and Optics, St. Petersburg, 197101, Russia
Abstract:The establishment of thermal equilibrium between photoinduced (shallow) and ground (deep) states of bistable DX centers in photochromic crystals CdF2:In and CdF2:Ga, which are used as real-time holographic media, is studied based on the notions of chemical kinetics. Two mechanisms of mutual transformation of shallow and deep centers—the tunnel mechanism and the mechanism with the participation of free charge carriers—are considered. Equations describing the decay of a photoinduced shallow state are obtained. These equations take into account the distribution of electrons between the photoinduced and ground states and the conduction band. Analysis of the experimental kinetic curves of the decay of photoexcited shallow centers makes it possible to determine the activation energies and barrier height for thermally activated processes of mutual transformation of shallow and deep centers. In CdF2:In and CdF2:Ga, this barrier, which determines the decay kinetics of holograms, lies above the bottom of the conduction band by ~10 and ~500 meV, respectively.
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